A new milestone on the way to Green light sources for HUD, Augmented and Mixed Reality applications!
In a recent article published by AIP, researchers from EXALOS have showcased cutting-edge technology for superluminescent light emitting diodes (SLEDs) that emit green light, based on InAlN n-type claddings. The performance of these devices, including electro-optical characteristics, optical confinement, and substrate leakage, has significantly improved when compared to traditional devices based on AlGaN claddings.
Superluminescent light emitting diodes (SLEDs) present a promising alternative to LDs. SLEDs, which adopt a ridge-waveguide architecture similar to LDs, suppress optical feedback by tilting the waveguide and applying anti-reflection coatings to the exit facet. As a result, SLED devices emit spatially coherent but temporally incoherent light, relying on broadband amplified spontaneous emission (ASE) while preventing lasing through their design. However, the relatively low modal gains in the green spectral region have limited the wall plug efficiency of SLEDs and LDs developed thus far.
In their recent study published in Applied Physics Letters (AIP Volume 122, Issue 20, 5 May 2023), EXALOS researchers demonstrate the use of n-InAlN claddings in state-of-the-art SLEDs and LDs that emit in the green spectral range. The findings also reveal a significant reduction in operating current along with a substantial improvement in the emission profile quality, without any substrate leakage.
Considering the obtained crystal quality, InAlN claddings hold promise as a suitable option for LDs and SLEDs devices with longer emission wavelengths, such as deep-green emitters.
The results of the research will be presented on June 29 by Exalos´ Dr. Malinverni at CLEO/Europe, this year held in the occasion of Laser World of Photonics, in Munich.